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DMN6040SSD
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I S
I DM
I AS
E AS
5.0
4.1
6.6
5.3
2.5
30
14.2
10
A
A
A
A
A
mJ
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<10s
T A = 25°C
T A = 70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.3
0.8
102
61
1.7
1.1
75
50
14.5
-55 to +150
W
°C/W
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
100
± 100
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1
?
?
?
?
?
30
35
4.5
0.7
3
40
55
?
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 4.5A
V GS = 4.5V, I D = 3.5A
V DS = 10V, I D = 4.3A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 10V)
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C iss
C oss
C rss
R G
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
?
?
?
?
?
?
?
?
?
?
?
?
?
?
1287
57
44
1.2
22.4
10.4
4.9
3.0
6.6
8.1
20.1
4.0
18
11.9
?
?
?
?
?
?
?
?
?
?
?
?
?
?
pF
Ω
nC
nS
nS
nC
V DS = 25V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = 30V, I D = 4.3A
V GS = 10V, V DD = 30V, R G = 6 Ω ,
I D = 4.3A
I S = 4.3A, dI/dt = 100A/ μ s
I S = 4.3A, dI/dt = 100A/ μ s
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN6040SSD
Document number: DS35673 Rev. 3 - 2
2 of 6
www.diodes.com
May 2012
? Diodes Incorporated
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